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Other articles related with "semiconductor layer"：
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124205 |
Sepehr Razi, Fatemeh Ghasemi |
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One-dimensional structure made of periodic slabs of SiO2/InSb offering tunable wide band gap at terahertz frequency range |
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Chin. Phys. B
2019 Vol.28 (12): 124205-124205
[Abstract]
(566)
[HTML 1 KB]
[PDF 5450 KB]
(154)
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4470 |
Guo Hui(郭辉), Wang Yue-Hu(王悦湖), Zhang Yu-Ming(张玉明), Qiao Da-Yong(乔大勇), and Zhang Yi-Men(张义门) |
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Formation of the intermediate semiconductor larger for the Ohmic contact to silicon carbide using Germanium implantation |
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Chin. Phys. B
2009 Vol.18 (10): 4470-4473
[Abstract]
(1533)
[HTML 1 KB]
[PDF 2869 KB]
(782)
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